01904 488599Back-gated OFET Substrate
Back-gated OFET Substrate, n-doped silicon wafer with 230 nm SiO2 gate-insulator, chips (diced)
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Kunden kauften auch:
| Menge pro VE | Bestell Nr. | |
|---|---|---|
  | 1 | FIPMS176-1PAK |
Kunden kauften auch:
| Menge pro VE | Bestell Nr. | |
|---|---|---|
| 1 | FIPMS176-1PAK |
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